wholesale IXTN550N055T2 Discrete Semiconductor Modules supplier,manufacturer,distributor

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IXTN550N055T2

Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET

  • Discrete Semiconductor Modules
  • IXTN550N055T2
  • IXYS
  • Tube
  • IXTN550N055T2 Datasheet
  • In Stock
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Mfr. Part #: IXTN550N055T2

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Product Power MOSFET Modules
Type Trench
Technology Si
Vr - Reverse Voltage 27.5 V
Vgs - Gate-Source Voltage - 20 V, + 20 V
Mounting Style Chassis Mount
Package / Case SOT-227-4
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Series IXTN550N055
Packaging Tube
Configuration Single
Brand IXYS
Number of Channels 1 Channel
Transistor Polarity N-Channel
Fall Time 230 ns
Id - Continuous Drain Current 550 A
Pd - Power Dissipation 940 W
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 1.3 mOhms
Rise Time 40 ns
Standard Pack Qty 10
Subcategory Discrete Semiconductor Modules
Tradename HiPerFET

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXTN550N055T2. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXTN550N055T2

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