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IXTP48N20TM

Discrete Semiconductor Modules MSFT N-CH TRENCH GATE -GEN1

Product Category: Discrete Semiconductor Modules
Mfr. Part #
IXTP48N20TM
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXTP48N20TM Datasheet
Inventory: In Stock

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Mfr. Part #: IXTP48N20TM

Specifications

Specifications

Manufacturer IXYS

Product Power MOSFET Modules

Type Trench

Technology Si

Vr - Reverse Voltage 500 mV

Vgs - Gate-Source Voltage - 20 V, + 20 V

Mounting Style Through Hole

Package / Case TO-220AB-3

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Packaging Tube

Configuration Single

Brand IXYS

Transistor Polarity N-Channel

Fall Time 28 ns

Id - Continuous Drain Current 48 A

Pd - Power Dissipation 250 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 50 mOhms

Rise Time 26 ns

Standard Pack Qty 50

Subcategory Discrete Semiconductor Modules

Tradename Trench

Typical Turn-Off Delay Time 46 ns

Typical Turn-On Delay Time 20 ns

Vds - Drain-Source Breakdown Voltage 200 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

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Please send inquiry, we will respond immediately.

Mfr. Part #: IXTP48N20TM