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IXTT10N100D

MOSFET 10 Amps 1000V 1.4 Rds

Product Category: MOSFET
Mfr. Part #
IXTT10N100D
Manufacturer: IXYS
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: IXTT10N100D Datasheet
Inventory: In Stock

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Mfr. Part #: IXTT10N100D

Specifications

Specifications

Manufacturer IXYS

Technology Si

Mounting Style SMD/SMT

Package / Case TO-268-3

Transistor Polarity N-Channel

Number of Channels 1 Channel

Vds - Drain-Source Breakdown Voltage 1 kV

Id - Continuous Drain Current 10 A

Rds On - Drain-Source Resistance 1.4 Ohms

Vgs - Gate-Source Voltage - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage 3.5 V

Qg - Gate Charge 130 nC

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 150 C

Pd - Power Dissipation 400 W

Channel Mode Depletion

Series IXTT10N100

Packaging Tube

Configuration Single

Height 5.1 mm

Length 14 mm

Transistor Type 1 N-Channel

Type High Voltage MOSFET

Width 16.05 mm

Brand IXYS

Forward Transconductance - Min 3 S

Fall Time 75 ns

Product Type MOSFET

Rise Time 85 ns

Standard Pack Qty 30

Subcategory MOSFETs

Typical Turn-Off Delay Time 110 ns

Typical Turn-On Delay Time 35 ns

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Mfr. Part #: IXTT10N100D