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IXXA50N60B3

IGBT Transistors IGBT XPT-GENX3

  • IGBT Transistors
  • IXXA50N60B3
  • IXYS
  • Tube
  • IXXA50N60B3 Datasheet
  • In Stock
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Mfr. Part #: IXXA50N60B3

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Package / Case TO-263-3
Mounting Style SMD/SMT
Configuration Single
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.55 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 120 A
Pd - Power Dissipation 600 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Tube
Continuous Collector Current Ic Max 200 A
Brand IXYS
Gate-Emitter Leakage Current 100 nA
Product Type IGBT Transistors
Standard Pack Qty 50
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXXA50N60B3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXXA50N60B3

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