wholesale IXYJ20N120C3D1 IGBT Transistors supplier,manufacturer,distributor

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IXYJ20N120C3D1

IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT

  • IGBT Transistors
  • IXYJ20N120C3D1
  • IXYS
  • Tube
  • IXYJ20N120C3D1 Datasheet
  • In Stock
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Mfr. Part #: IXYJ20N120C3D1

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Package / Case TO-247-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 4 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 21 A
Pd - Power Dissipation 105 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series IXYJ20N120
Packaging Tube
Continuous Collector Current Ic Max 21 A
Brand IXYS
Gate-Emitter Leakage Current 100 nA
Product Type IGBT Transistors
Standard Pack Qty 30
Subcategory IGBTs
Tradename XPT

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXYJ20N120C3D1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXYJ20N120C3D1

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