wholesale IXYP10N65C3D1M IGBT Transistors supplier,manufacturer,distributor

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IXYP10N65C3D1M

IGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP

  • IGBT Transistors
  • IXYP10N65C3D1M
  • IXYS
  • Tube
  • IXYP10N65C3D1M Datasheet
  • In Stock
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Mfr. Part #: IXYP10N65C3D1M

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  • Specifications

Specifications

Manufacturer IXYS
Technology Si
Package / Case TO-220-3
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Collector-Emitter Saturation Voltage 2.27 V
Maximum Gate Emitter Voltage - 20 V, 20 V
Continuous Collector Current at 25 C 15 A
Pd - Power Dissipation 53 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Packaging Tube
Continuous Collector Current Ic Max 50 A
Brand IXYS
Gate-Emitter Leakage Current 100 nA
Product Type IGBT Transistors
Standard Pack Qty 50
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the IXYP10N65C3D1M. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: IXYP10N65C3D1M

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