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J112_D27Z

JFETs 35V N-Channel Through Hole 625mW 50 Ohm TO-92-3

Product Category: JFETs
Mfr. Part #
J112_D27Z
Manufacturer: onsemi
Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Lead Free Status /RoHS Status:
Data Sheet: J112_D27Z Datasheet
Inventory: In Stock

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Mfr. Part #: J112_D27Z

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category JFETs

Series -

Packaging Cut Tape (CT) Alternate Packaging

Unit-Weight 0.007090 oz

Mounting-Style Through Hole

Package-Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Mounting-Type Through Hole

Supplier-Device-Package TO-92-3

Configuration Single

FET-Type N-Channel

Power-Max 625mW

Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.

35V VDSS â€“ Drain-Source Voltage

- Current-Drain-Idss-Vds-Vgs=0

5mA @ 15V Current-Drain-Id-Max

- Voltage-Cutoff-VGS-off-Id

1V @ 1Î¼A Input Capacitance

- Resistance-RDS-On

50 Ohm Pd-Power-Dissipation

625 mW Rds-On-Drain-Source-Resistance

50 Ohms Transistor-Polarity

N-Channel Vgs-Gate-Source-Breakdown-Voltage

- 35 V Drain-to-Source-Voltage-Vdss

5 mA Gate-Source-Cutoff-Voltage

Product Details

Features

â€¢ This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
â€¢ Sourced from process 51
â€¢ Source & Drain are interchangeable.

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Mfr. Part #: J112_D27Z