wholesale JANS2N3637UB/TR BJTs - Bipolar Transistors supplier,manufacturer,distributor

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JANS2N3637UB/TR

Bipolar Transistors - BJT BJTs

  • BJTs - Bipolar Transistors
  • JANS2N3637UB/TR
  • Microchip
  • JANS2N3637UB/TR Datasheet
  • In Stock
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Mfr. Part #: JANS2N3637UB/TR

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  • Specifications

Specifications

Manufacturer Microchip
RoHS
Mounting Style SMD/SMT
Package / Case LCC-3
Transistor Polarity PNP
Configuration Single
Collector- Emitter Voltage VCEO Max 175 V
Collector- Base Voltage VCBO 175 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 300 mV
Maximum DC Collector Current 1 A
Pd - Power Dissipation 1.5 W
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
DC Current Gain hFE Max 300 at - 50 mA, - 10 V
Technology Si
Brand Microchip / Microsemi
DC Collector/Base Gain hfe Min 55 at 100 uA, 10 V
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 1
Subcategory Transistors

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Mfr. Part #: JANS2N3637UB/TR

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