wholesale Jan2N2369AUB/TR BJTs - Bipolar Transistors supplier,manufacturer,distributor

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JAN2N2369AUB/TR

Bipolar Transistors - BJT BJTs

  • BJTs - Bipolar Transistors
  • Jan2N2369AUB/TR
  • Microchip
  • Jan2N2369AUB/TR Datasheet
  • In Stock
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Mfr. Part #: Jan2N2369AUB/TR

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  • Specifications

Specifications

Manufacturer Microchip
RoHS
Mounting Style SMD/SMT
Package / Case LCC-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 15 V
Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 4.5 V
Collector-Emitter Saturation Voltage 200 mV
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 360 mW
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
DC Current Gain hFE Max 120 at 100 mA, 1 V
Technology Si
Brand Microchip / Microsemi
DC Collector/Base Gain hfe Min 20 at 100 mA, 1 V
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 1
Subcategory Transistors

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Mfr. Part #: Jan2N2369AUB/TR

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