wholesale Jan2N6338 BJTs - Bipolar Transistors supplier,manufacturer,distributor

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JAN2N6338

Bipolar Transistors - BJT Power BJT

  • BJTs - Bipolar Transistors
  • Jan2N6338
  • Microchip
  • Tray
  • Jan2N6338 Datasheet
  • In Stock
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Mfr. Part #: Jan2N6338

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  • Specifications

Specifications

Manufacturer Microchip
RoHS
Mounting Style Through Hole
Package / Case TO-3-2
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 100 V
Collector- Base Voltage VCBO 120 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 1.8 V
Pd - Power Dissipation 200 W
Gain Bandwidth Product fT -
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 175 C
Packaging Tray
DC Current Gain hFE Max 120
Technology Si
Brand Microchip / Microsemi
Continuous Collector Current 25 A
DC Collector/Base Gain hfe Min 40
Product Type BJTs - Bipolar Transistors
Standard Pack Qty 1
Subcategory Transistors

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Mfr. Part #: Jan2N6338

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