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MA4SW410B-1

RF Switch ICs 2-18GHz ISO 35dB IL 1.4dB @ 18GHz

  • RF Switch ICs
  • MA4SW410B-1
  • MACOM
  • Tray
  • MA4SW410B-1 Datasheet
  • In Stock
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Mfr. Part #: MA4SW410B-1

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  • Product Details

Product Details

Description

The MA4SW410B-1 device is a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COMs HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies.

Features

â–  Broad Bandwith Specified from 2 to 18 GHz
â–  Integrated D.C. Bias Network
â–  Exceptional Isolation to Loss Ratio
â–  Rugged, Fully Monolithic, Glass Encapsulated Construction

Applications

These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard +5 V/-5 V, TTL Controlled PIN Diode Driver, 80 nS Switching Speeds are Achieved.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MA4SW410B-1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MA4SW410B-1

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