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MCH5908G-TL-E

JFETs 50mA 2 N-Channel (Dual) Surface Mount 300mW MCH5908 5-MCPH

  • JFETs
  • MCH5908G-TL-E
  • onsemi
  • 5-SMD, Flat Leads
  • MCH5908G-TL-E Datasheet
  • In Stock
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Mfr. Part #: MCH5908G-TL-E

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  • Specifications
  • Product Details

Specifications

Manufacturer onsemi
Product Category JFETs
Series MCH5908
Packaging Alternate Packaging
Package-Case 5-SMD, Flat Leads
Mounting-Type Surface Mount
Supplier-Device-Package 5-MCPH
FET-Type 2 N-Channel (Dual)
Power-Max 300mW
Breakdown voltage For diodes, the breakdown voltage is the minimum reverse voltage that makes the diode conduct appreciably in reverse. Some devices (such as TRIACs) also have a forward breakdown voltage.
- VDSS – Drain-Source Voltage
- Current-Drain-Idss-Vds-Vgs=0
10mA @ 5V Current-Drain-Id-Max
50mA Voltage-Cutoff-VGS-off-Id
300mV @ 100μA Input Capacitance
10.5pF @ 5V Resistance-RDS-On

Product Details

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode

Features

• Composite type with an N-channel silicon MOSFET (MCH3435) and a schottky barrier diode (SS0503SH) contained in one package facilitating high-density mounting.

[MOSFET]

• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.5V drive.

[SBD]

• Short reverse recovery time.
• Low forward voltage.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MCH5908G-TL-E. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: MCH5908G-TL-E

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