wholesale MLD1N06CLT4G Special Purpose Transistors supplier,manufacturer,distributor

Image is for illustrative purposes only. Please refer to product description.

MLD1N06CLT4G

Transistor General Purpose 1A Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 Digi-ReelR SMARTDISCRETESâ„¢ NPN, N-Channel Gate-Drain, Source Clamp 65V

  • Special Purpose Transistors
  • MLD1N06CLT4G
  • onsemi
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • MLD1N06CLT4G Datasheet
  • In Stock
  • Unit Price:
    Inquiry
  • Quantity:
    -
    +

Please send inquiry,we will respond immediately.

Mfr. Part #: MLD1N06CLT4G

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product
  • Specifications
  • Product Details

Specifications

Manufacturer onsemi
Product Category Special Purpose Transistors
Series SMARTDISCRETESâ„¢
Packaging Current-Rating
1A Package-Case
TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting-Type
Surface Mount Voltage-Rated
65V Applications
General Purpose Supplier-Device-Package
DPAK-3 Transistor-Type

Product Details

Power MOSFET 1 Amp, 62 Volts, Logic Level N−Channel DPAK

The MLD1N06CL is designed for applications that require a rugged power switching device with short circuit protection that can be directly interfaced to a microcontrol unit (MCU). Ideal applications include automotive fuel injector driver, incandescent lamp driver or other applications where a high in−rush current or a shorted load condition could occur.

This Logic Level Power MOSFET features current limiting for short circuit protection, integrated Gate−Source clamping for ESD protection and integral Gate−Drain clamping for over−voltage protection and technology for low on−resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 k gate pulldown resistor is recommended to avoid a floating gate condition.
The internal Gate−Source and Gate−Drain clamps allow the device to be applied without use of external transient suppression components. The Gate−Source clamp protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp protects the MOSFET drain from the avalanche stress that occurs with inductive loads. Their unique design provides voltage clamping that is essentially independent of operating temperature.

Features

• Pb−Free Package is Available

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MLD1N06CLT4G. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

READ MORE

Please send inquiry, we will respond immediately.

Mfr. Part #: MLD1N06CLT4G

*
*
*
Upload Your BOM File

CSV or Excel file format only. Max file size: 2Mb

empty-product

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.

PayPalWestern UnionUPSDHLFedExEMSTNTaramex
Contact Us
+1 (620)699-8580
sales@icchips.com
8 Marina View, Asia Square Tower 1, #42-01 & #43-01, Singapore, 018960
PayPalWestern UnionUPSDHLFedExEMSTNTaramex

Copyright © 2024 ICCHIPS ELECTRONICS PTE.LTD. All right Reserved.