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MMBTH11

RF BJT 50mA 650MHz Surface Mount 225mW SOT-23-3 (TO-236) NPN 25V

Product Category: RF Transistors (BJT)
Mfr. Part #
MMBTH11
Manufacturer: onsemi
Package: TO-236-3, SC-59, SOT-23-3
Lead Free Status /RoHS Status:
Data Sheet: MMBTH11 Datasheet
Inventory: In Stock

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Mfr. Part #: MMBTH11

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category RF Transistors (BJT)

Series -

Packaging Alternate Packaging

Unit-Weight 0.002116 oz

Mounting-Style SMD/SMT

Package-Case TO-236-3, SC-59, SOT-23-3

Technology Si

Mounting-Type Surface Mount

Supplier-Device-Package SOT-23-3 (TO-236)

Configuration Single

Power-Max 225mW

Transistor-Type NPN

Electric current collectors 50mA

Voltage-Collector-Emitter-Breakdown-Max 25V

DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 4mA, 10V

Frequency-Transition 650MHz

Noise-Figure-dB-Typ-f -

Gain -

Pd-Power-Dissipation 225 mW

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Operating-Frequency 650 MHz

Collector-Emitter-Voltage-VCEO-Max 25 V

Transistor-Polarity NPN

Emitter-Base-Voltage-VEBO 3 V

Maximum-DC-Collector-Current 0.05 A

Continuous-Collector-Current 0.05 A

DC-Collector-Base-Gain-hfe-Min 60

Product Details

NPN RF Transistor

This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 ÂµA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47.

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Please send inquiry, we will respond immediately.

Mfr. Part #: MMBTH11