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MMIX1X200N60B3H1

IGBT Transistors SMPD IGBTs Power Device

  • IGBT Transistors
  • MMIX1X200N60B3H1
  • IXYS
  • Tube
  • MMIX1X200N60B3H1 Datasheet
  • In Stock
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Mfr. Part #: MMIX1X200N60B3H1

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  • Specifications

Specifications

Manufacturer IXYS
RoHS
Technology Si
Package / Case SMDP-21
Mounting Style SMD/SMT
Configuration Single
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.7 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 175 A
Pd - Power Dissipation 520 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series MMIX1X200N60
Packaging Tube
Brand IXYS
Gate-Emitter Leakage Current 200 nA
Product Type IGBT Transistors
Standard Pack Qty 20
Subcategory IGBTs

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MMIX1X200N60B3H1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MMIX1X200N60B3H1

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