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MPSH10

RF BJT 50mA 650MHz Through Hole 350mW TO-92-3 NPN 25V

Product Category: RF Transistors (BJT)
Mfr. Part #
MPSH10
Manufacturer: onsemi
Package: TO-226-3, TO-92-3 (TO-226AA)
Lead Free Status /RoHS Status:
Data Sheet: MPSH10 Datasheet
Inventory: In Stock

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Mfr. Part #: MPSH10

Specifications
Product Details

Specifications

Manufacturer onsemi

Product Category RF Transistors (BJT)

Series MPSH10

Packaging Bulk

Unit-Weight 0.016000 oz

Mounting-Style Through Hole

Package-Case TO-226-3, TO-92-3 (TO-226AA)

Mounting-Type Through Hole

Supplier-Device-Package TO-92-3

Configuration Single

Power-Max 350mW

Transistor-Type NPN

Electric current collectors 50mA

Voltage-Collector-Emitter-Breakdown-Max 25V

DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 4mA, 10V

Frequency-Transition 650MHz

Noise-Figure-dB-Typ-f -

Gain -

Pd-Power-Dissipation 350 mW

Maximum Operating Temperature + 150 C

Operating temperature range - 55 C

Collector-Emitter-Voltage-VCEO-Max 25 V

Transistor-Polarity NPN

Collector-Emitter-Saturation-Voltage 0.5 V

Collector-Base-Voltage-VCBO 30 V

Emitter-Base-Voltage-VEBO 3 V

Maximum-DC-Collector-Current 0.025 A

Gain-Bandwidth-Product-fT 650 MHz

Continuous-Collector-Current 0.45 A

DC-Collector-Base-Gain-hfe-Min 60

Product Details

Features

â€¢ Capable of 0.35Watts of Power Dissipation.
â€¢ Collector Current: 0.05A
â€¢ Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
â€¢ Epoxy meets UL 94 V-0 flammability rating
â€¢ Moisure Sensitivity Level 1
â€¢ Marking:MPSH10
â€¢ Halogen free available upon request by adding suffix "-HF"

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Please send inquiry, we will respond immediately.

Mfr. Part #: MPSH10