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MRF101BN

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

Product Category: Transistors RF
Mfr. Part #
MRF101BN
Manufacturer: NXP
Package: Tube
Lead Free Status /RoHS Status:
Data Sheet: MRF101BN Datasheet
Inventory: In Stock

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Mfr. Part #: MRF101BN

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 8.8 A

Vds - Drain-Source Breakdown Voltage 133 V

Rds On - Drain-Source Resistance -

Operating Frequency 1.8 MHz to 250 MHz

Gain 21.1 dB

Output Power 100 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style Through Hole

Package / Case TO-220-3

Packaging Tube

RF & Wireless RF MOSFET Transistors

Series MRF101BN

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Forward Transconductance - Min 7.1 S

Number of Channels 1 Channel

Pd - Power Dissipation 182 W

Product Type RF MOSFET Transistors

Standard Pack Qty 50

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, + 10 V

Vgs th - Gate-Source Threshold Voltage 1.7 V

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Mfr. Part #: MRF101BN