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MRF1K50GNR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V

Product Category: Transistors RF
Mfr. Part #
MRF1K50GNR5
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: MRF1K50GNR5 Datasheet
Inventory: In Stock

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Mfr. Part #: MRF1K50GNR5

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 36 A

Vds - Drain-Source Breakdown Voltage 133 V

Operating Frequency 1.8 MHz to 500 MHz

Gain 23 dB

Output Power 1.5 kW

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case OM-1230G-4L

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series MRF1K50N

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Forward Transconductance - Min 33.5 S

Number of Channels 2 Channel

Moisture Sensitive Yes

Pd - Power Dissipation 2.941 kW

Product Type RF MOSFET Transistors

Standard Pack Qty 50

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.7 V

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Mfr. Part #: MRF1K50GNR5