wholesale MRF21045LSR3 RF FETs supplier,manufacturer,distributor

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MRF21045LSR3

IC MOSFET RF N-CHAN NI-400S

  • RF FETs
  • MRF21045LSR3
  • Freescale / NXP
  • NI-400S
  • MRF21045LSR3 Datasheet
  • In Stock
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Mfr. Part #: MRF21045LSR3

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  • Product Details

Product Details

The RF MOSFET Line

RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,

f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — -37.5 dBc
ACPR — -41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF21045LSR3. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MRF21045LSR3

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