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MRF281S
IC MOSFET RF N-CHAN NI-200S
- Product Category: RF FETs
- Mfr. Part # MRF281S
- Package: NI-200S
- Lead Free Status /RoHS Status:
- Data Sheet: MRF281S Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: MRF281S
- Product Details
Product Details
The RF Sub–Micron MOSFET Line
RF POWER FIELD EFFECT TRANSISTORSN–Channel Enhancement–Mode Lateral MOSFETs
Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications.
• Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts
Output Power — 4 Watts PEPPower Gain — 11 dB
Efficiency — 30%
Intermodulation Distortion — –29 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF281S. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF281S
