Image is for illustrative purposes only. Please refer to product description.
MRF282S
IC MOSFET RF N-CHAN NI-200S
- Product Category: RF FETs
- Mfr. Part # MRF282S
- Package: NI-200S
- Lead Free Status /RoHS Status:
- Data Sheet: MRF282S Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: MRF282S
- Product Details
Product Details
The RF Sub–Micron MOSFET Line
RF Power Field Effect TransistorsN–Channel Enhancement–Mode Lateral MOSFETs
Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (PEP)Power Gain = 11 dB
Efficiency = 30%
Intermodulation Distortion = –30 dBc
• Specified Single–Tone Performance @ 2000 MHz, 26 Volts
Output Power = 10 Watts (CW)
Power Gain = 11 dB
Efficiency = 40%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts (CW) Output Power
• Gold Metallization for Improved Reliability
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF282S. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF282S
