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MRF5S19060NBR1

MOSFET N-CH 12W 28V TO-272-4

  • RF FETs
  • MRF5S19060NBR1
  • Freescale / NXP
  • TO-272BB
  • MRF5S19060NBR1 Datasheet
  • In Stock
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Mfr. Part #: MRF5S19060NBR1

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  • Product Details

Product Details

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, commonsource amplifier applications in 28 Volt base station equipment.

• Typical 2-carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 750 mA,

Pout = 12 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23%
IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF5S19060NBR1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MRF5S19060NBR1

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