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MRF5S19090H
- Product Category: RF FETs
- Mfr. Part # MRF5S19090H
- Package: SMD
- Lead Free Status /RoHS Status:
- Data Sheet: MRF5S19090H Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: MRF5S19090H
- Product Details
Product Details
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETsDesigned for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 850 mA,
Pout = 18 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync,Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.8%
IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — -51 dB in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF5S19090H. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF5S19090H
