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MRF5S9080NB
MOSFET RF N-CH 26V 80W TO-272-4
- Product Category: RF FETs
- Mfr. Part # MRF5S9080NB
- Package: TO-272BB
- Lead Free Status /RoHS Status:
- Data Sheet: MRF5S9080NB Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: MRF5S9080NB
- Product Details
Product Details
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETsDesigned for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
GSM Application
• Typical GSM Performance: VDD = 26 Volts, IDQ = 600 mA, Pout = 80 Watts CW, Full Frequency Band (869-894 MHz or 921-960 MHz).Power Gain — 18.5 dB
Drain Efficiency — 60%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 550 mA, Pout = 36 Watts Avg., Full Frequency Band (869-894 MHz or 921-960 MHz).Power Gain — 19 dB
Drain Efficiency — 42%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 2.5% rms
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 80 Watts CW Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF5S9080NB. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF5S9080NB
