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MRF5S9100NR1

MOSFET N-CH 100W 26V TO-270-4

Product Category: RF FETs
Mfr. Part #
MRF5S9100NR1
Manufacturer: Freescale / NXP
Package: TO-270AB
Lead Free Status /RoHS Status:
Data Sheet: MRF5S9100NR1 Datasheet
Inventory: In Stock

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Mfr. Part #: MRF5S9100NR1

Specifications
Product Details

Specifications

Manufacturer Freescale / NXP

Product Category RF FETs

Categories Transistors - FETs, MOSFETs - RF

Manufacturer NXP USA Inc.

Series -

Packaging Cut Tape (CT)

Part-Status Obsolete

Transistor-Type LDMOS

Frequency 880MHz

Gain 19.5dB

Voltage-Test 26V

Current-Rating -

Noise-Figure -

Current-Test 950mA

Power-Output 20W

Voltage-Rated 68V

Package-Case TO-270AB

Supplier-Device-Package TO-270 WB-4

Base-Part-Number MRF5S9100

Product Details

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.

â€¢ Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 26 Volts,

IDQ = 950 mA, Pout = 20 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain â€” 19.5 dB
Drain Efficiency â€” 28%
ACPR @ 750 kHz Offset â€” -46.8 dBc in 30 kHz Bandwidth
â€¢ Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 100 Watts CW Output Power

Features

â€¢ Characterized with Series Equivalent Large-Signal Impedance Parameters
â€¢ Internally Matched for Ease of Use
â€¢ Qualified Up to a Maximum of 32 VDD Operation
â€¢ Integrated ESD Protection
â€¢ 200Â°C Capable Plastic Package
â€¢ N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
â€¢ In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

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Mfr. Part #: MRF5S9100NR1