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MRF6P21190H
- Product Category: RF FETs
- Mfr. Part # MRF6P21190H
- Package: TUBE
- Lead Free Status /RoHS Status:
- Data Sheet: MRF6P21190H Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: MRF6P21190H
- Product Details
Product Details
2110-2170 MHz, 44 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFET
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 44 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dBDrain Efficiency — 26.5%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
CASE 375D-05, STYLE 1 NI-1230
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF6P21190H. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF6P21190H
