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MRF6P23190HR6

MOSFET RF N-CHAN 28V 40W NI-1230

Product Category: RF FETs
Mfr. Part #
MRF6P23190HR6
Manufacturer: Freescale / NXP
Package: NI-1230
Lead Free Status /RoHS Status:
Data Sheet: MRF6P23190HR6 Datasheet
Inventory: In Stock

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Mfr. Part #: MRF6P23190HR6

Specifications
Product Details

Specifications

Manufacturer Freescale / NXP

Product Category RF FETs

Categories Transistors - FETs, MOSFETs - RF

Manufacturer NXP USA Inc.

Series -

Packaging Tape & Reel (TR)

Part-Status Obsolete

Transistor-Type LDMOS

Frequency 2.39GHz

Gain 14dB

Voltage-Test 28V

Current-Rating -

Noise-Figure -

Current-Test 1.9A

Power-Output 40W

Voltage-Rated 68V

Package-Case NI-1230

Supplier-Device-Package NI-1230

Base-Part-Number *

Product Details

2300-2400 MHz, 40 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications.

â€¢ Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain â€” 14 dB
Drain Efficiency â€” 23.5%
IM3 @ 10 MHz Offset â€” -37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset â€” -41 dBc in 3.84 MHz Channel Bandwidth
â€¢ Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power

Features

â€¢ Characterized with Series Equivalent Large-Signal Impedance Parameters
â€¢ Internally Matched for Ease of Use
â€¢ Qualified Up to a Maximum of 32 VDD Operation
â€¢ Integrated ESD Protection
â€¢ Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
â€¢ RoHS Compliant
â€¢ In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

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Mfr. Part #: MRF6P23190HR6