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MRF6S19060NR1

MOSFET RF N-CH 28V 12W TO270-4

Product Category: RF FETs
Mfr. Part #
MRF6S19060NR1
Manufacturer: Freescale / NXP
Package: TO-270AB
Lead Free Status /RoHS Status:
Data Sheet: MRF6S19060NR1 Datasheet
Inventory: In Stock

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Mfr. Part #: MRF6S19060NR1

Specifications
Product Details

Specifications

Manufacturer Freescale / NXP

Product Category RF FETs

Categories Transistors - FETs, MOSFETs - RF

Manufacturer NXP USA Inc.

Series -

Packaging Tape & Reel (TR)

Part-Status Obsolete

Transistor-Type LDMOS

Frequency 1.93GHz

Gain 16dB

Voltage-Test 28V

Current-Rating -

Noise-Figure -

Current-Test 610mA

Power-Output 12W

Voltage-Rated 68V

Package-Case TO-270AB

Supplier-Device-Package TO-270 WB-4

Base-Part-Number MRF6S19060

Product Details

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.

â€¢ Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts,

IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band, IS-95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain â€” 16 dB
Drain Efficiency â€” 26%
IM3 @ 2.5 MHz Offset â€” -37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset â€” -51 dBc in 30 kHz Bandwidth
â€¢ Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW Output Power

Features

â€¢ Characterized with Series Equivalent Large-Signal Impedance Parameters
â€¢ Internally Matched for Ease of Use
â€¢ Qualified Up to a Maximum of 32 VDD Operation
â€¢ Integrated ESD Protection
â€¢ Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
â€¢ 200Â°C Capable Plastic Package
â€¢ N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
â€¢ In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

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Mfr. Part #: MRF6S19060NR1