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MRF6S19100H
- Product Category: RF FETs
- Mfr. Part # MRF6S19100H
- Package: SMD
- Lead Free Status /RoHS Status:
- Data Sheet: MRF6S19100H Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: MRF6S19100H
- Product Details
Product Details
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETsDesigned for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 900 mA,
Pout = 22 Watts Avg., f = 1987 MHz, IS-95 (Pilot, Sync, Paging, TrafficCodes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain — 16.1 dB
Drain Efficiency — 28% IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF6S19100H. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF6S19100H
