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MRF6S9060NR1
MOSFET RF N-CH 28V 14W TO-270-2
- Product Category: RF FETs
- Mfr. Part # MRF6S9060NR1
- Manufacturer: Freescale / NXP
- Package: TO-270AA
- Lead Free Status /RoHS Status:
- Data Sheet: MRF6S9060NR1 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
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Mfr. Part #: MRF6S9060NR1
- Specifications
- Product Details
Specifications
Product Details
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 28 volt base station equipment.
• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts, IDQ = 450 mA, Pout = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21.4 dBDrain Efficiency — 32.1%
ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 21 Watts Avg., Full Frequency Band (921-960 MHz)Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = -62 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.5% rms
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequency Band (921-960 MHz)Power Gain — 20 dB
Drain Efficiency — 63%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 60 Watts CW Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters• Integrated ESD Protection
• 225°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
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Please send inquiry, we will respond immediately.
Mfr. Part #: MRF6S9060NR1
