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MRF6V12250HR5

RF MOSFET Transistors VHV6 250W 50V NI780H

  • Transistors RF
  • MRF6V12250HR5
  • NXP
  • Reel
  • MRF6V12250HR5 Datasheet
  • In Stock
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Mfr. Part #: MRF6V12250HR5

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  • Specifications
  • Product Details

Specifications

Manufacturer NXP
RoHS
Transistor Polarity N-Channel
Technology Si
Vds - Drain-Source Breakdown Voltage 110 V
Operating Frequency 960 MHz to 1.215 GHz
Gain 20.3 dB
Output Power 27.5 W
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case NI-780
Packaging Reel
RF & Wireless RF MOSFET Transistors
Configuration Single
Series MRF6V12250H
Type RF Power MOSFET
Brand NXP Semiconductors
Product Type RF MOSFET Transistors
Standard Pack Qty 50
Subcategory MOSFETs
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2.4 V

Product Details

1090 MHz, 10 W, 50 V PULSED LATERAL N--CHANNEL RF POWER MOSFET

RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.

• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%

Power Gain — 25 dB
Drain Efficiency — 69%

Features

• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF6V12250HR5. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MRF6V12250HR5

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