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MRF6V12250HR5
RF MOSFET Transistors VHV6 250W 50V NI780H
- Product Category: Transistors RF
- Mfr. Part # MRF6V12250HR5
- Manufacturer: NXP
- Package: Reel
- Lead Free Status /RoHS Status:
- Data Sheet: MRF6V12250HR5 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: MRF6V12250HR5
- Specifications
- Product Details
Specifications
Product Details
1090 MHz, 10 W, 50 V PULSED LATERAL N--CHANNEL RF POWER MOSFET
RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 25 dBDrain Efficiency — 69%
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF6V12250HR5. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF6V12250HR5