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MRF6VP41KHSR5
RF FET + 150 C SMD/SMT NI-1230S Si N-Channel 110 V
- Product Category: RF FETs
- Mfr. Part # MRF6VP41KHSR5
- Manufacturer: Freescale / NXP
- Package: NI-1230S
- Lead Free Status /RoHS Status:
- Data Sheet: MRF6VP41KHSR5 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
-
Please send inquiry,we will respond immediately.
Mfr. Part #: MRF6VP41KHSR5
- Specifications
- Product Details
Specifications
Product Details
1.8--150 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs
Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 26 dBDrain Efficiency — 71%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters• CW Operation Capability with Adequate Cooling
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Designed for Push--Pull Operation
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF6VP41KHSR5. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF6VP41KHSR5
