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MRF7S18170H

Product Category: RF FETs
Mfr. Part #
MRF7S18170H
Package: NI-880
Lead Free Status /RoHS Status:
Data Sheet: MRF7S18170H Datasheet
Inventory: In Stock

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Mfr. Part #: MRF7S18170H

Product Details

Product Details

1930-1990 MHz, 36 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

â€¢ Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg., Full Frequency Band, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @0.01% Probability on CCDF.

Power Gain â€” 18 dB
Drain Efficiency â€” 32%
Device Output Signal PAR â€” 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset â€” -38.5 dBc in 3.84 MHz Channel Bandwidth
â€¢ Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW Output Power
â€¢ Pout @ 1 dB Compression Point 120 W CW

Features

â€¢ 100% PAR Tested for Guaranteed Output Power Capability
â€¢ Characterized with Series Equivalent Large-Signal Impedance Parameters
â€¢ Internally Matched for Ease of Use
â€¢ Integrated ESD Protection
â€¢ Greater Negative Gate-Source Voltage Range for Improved Class C Operation
â€¢ Designed for Digital Predistortion Error Correction Systems
â€¢ 225Â°C Capable Plastic Package
â€¢ RoHS Compliant
â€¢ In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

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Please send inquiry, we will respond immediately.

Mfr. Part #: MRF7S18170H