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MRF7S38010H
- Product Category: RF FETs
- Mfr. Part # MRF7S38010H
- Package: module
- Lead Free Status /RoHS Status:
- Data Sheet: MRF7S38010H Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Please send inquiry,we will respond immediately.
Mfr. Part #: MRF7S38010H
- Product Details
Product Details
3100--3500 MHz, 15 W PEAK, 32 V PULSED LATERAL N--CHANNEL RF POWER MOSFET
Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
• Typical Pulsed Performance: VDD = 32 Volts, IDQ = 50 mA, Pout = 15 Watts Peak (3 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20%
Power Gain — 16 dBDrain Efficiency — 41%
• Typical WiMAX Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 1.8 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
Power Gain — 18 dB
Drain Efficiency — 16%
RCE — --33 dB (EVM — 2.2% rms)
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3300 MHz, 15 Watts Peak Power
• Capable of Handling 3 dB Overdrive @ 32 Vdc
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF7S38010H. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF7S38010H
