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MRF8P20161HSR3
RF FET 16.5 dB at 1.9 GHz + 150 C SMD/SMT 1.88 GHz to 2.025 GHz NI-780S-4 Si N-Channel 65 V
- Product Category: RF FETs
- Mfr. Part # MRF8P20161HSR3
- Manufacturer: Freescale / NXP
- Package: NI-780S-4
- Lead Free Status /RoHS Status:
- Data Sheet: MRF8P20161HSR3 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: MRF8P20161HSR3
- Specifications
- Product Details
Specifications
Product Details
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETsDesigned for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 30 Volts,
IDQA = 800 mA, VGSB = 1.3 V, Pout = 72 Watts Avg., IQ Magnitude Clipping,Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 280 Watts CW
Output Power (2 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 280 Watts CW
Features
• Production Tested in a Symmetrical Doherty Configuration• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
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Please send inquiry, we will respond immediately.
Mfr. Part #: MRF8P20161HSR3
