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MRF8S21200HR6
MOSFET RF N-CH 48W NI-1230H
- Product Category: RF FETs
- Mfr. Part # MRF8S21200HR6
- Manufacturer: Freescale / NXP
- Package: NI-1230
- Lead Free Status /RoHS Status:
- Data Sheet: MRF8S21200HR6 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: MRF8S21200HR6
- Specifications
- Product Details
Specifications
Product Details
728--768 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET
Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 360 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness• Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRF8S21200HR6. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MRF8S21200HR6
