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MRF8S7120NR3

FET RF LDMOS 768MHZ 28V

Product Category: RF FETs
Mfr. Part #
MRF8S7120NR3
Manufacturer: Freescale / NXP
Package: OM-780-2
Lead Free Status /RoHS Status:
Data Sheet: MRF8S7120NR3 Datasheet
Inventory: In Stock

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Mfr. Part #: MRF8S7120NR3

Specifications
Product Details

Specifications

Manufacturer Freescale / NXP

Product Category RF FETs

Categories Transistors - FETs, MOSFETs - RF

Manufacturer NXP USA Inc.

Series -

Packaging Tape & Reel (TR)

Part-Status Obsolete

Transistor-Type LDMOS

Frequency 768MHz

Gain 19.2dB

Voltage-Test 28V

Current-Rating -

Noise-Figure -

Current-Test 600mA

Power-Output 32W

Voltage-Rated 70V

Package-Case OM-780-2

Supplier-Device-Package OM-780-2

Base-Part-Number *

Product Details

728-768 MHz, 50 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

â€¢ Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF

â€¢ Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 170 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
â€¢ Typical Pout @ 1 dB Compression Point 182 Watts CW

Features

â€¢ 100% PAR Tested for Guaranteed Output Power Capability
â€¢ Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
â€¢ Internally Matched for Ease of Use
â€¢ Integrated ESD Protection
â€¢ Greater Negative Gate-Source Voltage Range for Improved Class C Operation
â€¢ Designed for Digital Predistortion Error Correction Systems
â€¢ 225Â°C Capable Plastic Package
â€¢ RoHS Compliant
â€¢ In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

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Mfr. Part #: MRF8S7120NR3