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MRFE6S9125NR1

RF FET 19 dB 20 dB 20.2 dB + 150 C SMD/SMT 880 MHz TO-270 WB EP Si N-Channel - 0.5 V 66 V

  • RF FETs
  • MRFE6S9125NR1
  • Freescale / NXP
  • TO-270AB
  • MRFE6S9125NR1 Datasheet
  • In Stock
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Mfr. Part #: MRFE6S9125NR1

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  • Specifications
  • Product Details

Specifications

Manufacturer Freescale / NXP
Product Category RF FETs
Series MRFE6S9125N
Packaging Reel
Unit-Weight 0.058073 oz
Mounting-Style SMD/SMT
Package-Case TO-270 WB EP
Technology Si
Gain 19 dB 20 dB 20.2 dB
Output-Power 27 W
Maximum Operating Temperature + 150 C
Operating temperature range - 65 C
Operating-Frequency 880 MHz
Vgs-Gate-Source-Voltage - 0.5 V 12 V
Vds-Drain-Source-Breakdown-Voltage - 0.5 V 66 V
Vgs-th-Gate-Source-Threshold-Voltage 2.1 V
Transistor-Polarity N-Channel

Product Details

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

N-CDMA Application

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,
IDQ = 950 mA, Pout = 27 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain — 20.2 dB
Drain Efficiency — 31%
ACPR @ 750 kHz Offset = -45.7 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

GSM EDGE Application

• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
Pout = 60 Watts Avg., Full Frequency Band (865-960 MHz or 920-960 MHz)
Power Gain — 20 dB
Drain Efficiency — 40%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM — 1.8% rms

GSM Application

• Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =
125 Watts, Full Frequency Band (920-960 MHz)
Power Gain — 19 dB
Drain Efficiency — 62%

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRFE6S9125NR1. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MRFE6S9125NR1

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