wholesale MRFE6S9135HS RF FETs supplier,manufacturer,distributor

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MRFE6S9135HS

  • RF FETs
  • MRFE6S9135HS
  • NI-880S
  • MRFE6S9135HS Datasheet
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Mfr. Part #: MRFE6S9135HS

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  • Product Details

Product Details

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, common- source amplifier applications in 28 volt base station equipment.

• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =

1000 mA, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 32.3%
Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — -39.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 180 W CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

Features

• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRFE6S9135HS. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MRFE6S9135HS

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