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MRFE6VP5300NR1

RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V

Product Category: RF MOSFET Transistors
Mfr. Part #
MRFE6VP5300NR1
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: MRFE6VP5300NR1 Datasheet
Inventory: In Stock

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Mfr. Part #: MRFE6VP5300NR1

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 2 A

Vds - Drain-Source Breakdown Voltage 133 V

Rds On - Drain-Source Resistance -

Operating Frequency 1.8 MHz to 600 MHz

Gain 25 dB

Output Power 300 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series MRFE6VP5300N

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Moisture Sensitive Yes

Product Type RF MOSFET Transistors

Standard Pack Qty 500

Subcategory MOSFETs

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Mfr. Part #: MRFE6VP5300NR1