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MRFE6VP61K25HR6

RF MOSFET Transistors VHV6 1.25KW ISM NI1230H

  • Transistors RF
  • MRFE6VP61K25HR6
  • NXP
  • Cut Tape/Reel
  • MRFE6VP61K25HR6 Datasheet
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Mfr. Part #: MRFE6VP61K25HR6

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  • Specifications

Specifications

Manufacturer NXP
RoHS
Transistor Polarity N-Channel
Technology Si
Id - Continuous Drain Current 10 uA
Vds - Drain-Source Breakdown Voltage 133 V
Rds On - Drain-Source Resistance -
Operating Frequency 1.8 MHz, 600 MHz
Gain 24 dB
Output Power 1.25 kW
Minimum Operating Temperature -
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case NI-1230
Packaging Cut Tape
Packaging Reel
RF & Wireless RF MOSFET Transistors
Configuration Single
Series MRFE6VP61K25H
Transistor Type LDMOS FET
Type RF Power MOSFET
Brand NXP Semiconductors
Pd - Power Dissipation 1.333 kW
Product Type RF MOSFET Transistors
Standard Pack Qty 150
Subcategory MOSFETs
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2.2 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRFE6VP61K25HR6. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MRFE6VP61K25HR6

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