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MRFE6VS25GNR1

RF MOSFET Transistors VHV6E 25W50V TO270-2G

Product Category: Transistors RF
Mfr. Part #
MRFE6VS25GNR1
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: MRFE6VS25GNR1 Datasheet
Inventory: In Stock

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Mfr. Part #: MRFE6VS25GNR1

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 210 mA

Vds - Drain-Source Breakdown Voltage 142 V

Rds On - Drain-Source Resistance -

Operating Frequency 1.8 GHz to 2 GHz

Gain 27 dB

Output Power 25 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case TO-270-2

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series MRFE6VS25N

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Moisture Sensitive Yes

Product Type RF MOSFET Transistors

Standard Pack Qty 500

Subcategory MOSFETs

Vgs - Gate-Source Voltage 10 V

Vgs th - Gate-Source Threshold Voltage 2.5 V

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Mfr. Part #: MRFE6VS25GNR1