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MRFE6VS25LR5

RF MOSFET Transistors VHV6E 25W50V NI360L

  • Transistors RF
  • MRFE6VS25LR5
  • NXP
  • Cut Tape/Reel
  • MRFE6VS25LR5 Datasheet
  • In Stock
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Mfr. Part #: MRFE6VS25LR5

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  • Specifications

Specifications

Manufacturer NXP
RoHS
Transistor Polarity N-Channel
Technology Si
Id - Continuous Drain Current 210 mA
Vds - Drain-Source Breakdown Voltage 140 V
Rds On - Drain-Source Resistance -
Operating Frequency 1.8 MHz to 2 GHz
Gain 25.9 dB
Output Power 25 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT
Package / Case NI-360-2
Packaging Cut Tape
Packaging Reel
RF & Wireless RF MOSFET Transistors
Configuration Single
Series MRFE6VS25L
Transistor Type LDMOS FET
Type RF Power MOSFET
Brand NXP Semiconductors
Channel Mode Enhancement
Product Type RF MOSFET Transistors
Standard Pack Qty 50
Subcategory MOSFETs
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2 V

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRFE6VS25LR5. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MRFE6VS25LR5

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