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MRFE8VP8600HSR5

RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor

Product Category: Transistors RF
Mfr. Part #
MRFE8VP8600HSR5
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: MRFE8VP8600HSR5 Datasheet
Inventory: In Stock

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Mfr. Part #: MRFE8VP8600HSR5

Specifications

Specifications

Manufacturer NXP

Transistor Polarity Dual N-Channel

Technology Si

Id - Continuous Drain Current 2.8 A

Vds - Drain-Source Breakdown Voltage - 500 mV, 115 V

Operating Frequency 470 MHz to 860 MHz

Gain 21 dB

Output Power 140 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case NI-1230S-4S

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series MRFE8VP8600H

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Pd - Power Dissipation 1.25 kW

Product Type RF MOSFET Transistors

Standard Pack Qty 50

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.3 V

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Mfr. Part #: MRFE8VP8600HSR5