wholesale MRFG35010 RF FETs supplier,manufacturer,distributor

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MRFG35010

TRANSISTOR RF FET 3.5GHZ NI360HF

  • RF FETs
  • MRFG35010
  • Freescale / NXP
  • NI-360HF
  • MRFG35010 Datasheet
  • In Stock
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Mfr. Part #: MRFG35010

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  • Specifications
  • Product Details

Specifications

Manufacturer Freescale / NXP
Product Category RF FETs
Categories Transistors - FETs, MOSFETs - RF
Manufacturer NXP USA Inc.
Series -
Packaging Tube
Part-Status Obsolete
Transistor-Type pHEMT FET
Frequency 3.55GHz
Gain 10dB
Voltage-Test 12V
Current-Rating -
Noise-Figure -
Current-Test 130mA
Power-Output 9W
Voltage-Rated 15V
Package-Case NI-360HF
Supplier-Device-Package NI-360HF
Base-Part-Number MRFG35010

Product Details

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.

• Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GHz, 12 Volts,

IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30%
• 10 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MRFG35010. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Please send inquiry, we will respond immediately.

Mfr. Part #: MRFG35010

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