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MRFX035HR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V

Product Category: Transistors RF
Mfr. Part #
MRFX035HR5
Manufacturer: NXP
Package: Cut Tape/Reel
Lead Free Status /RoHS Status:
Data Sheet: MRFX035HR5 Datasheet
Inventory: In Stock

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Mfr. Part #: MRFX035HR5

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 100 mA

Vds - Drain-Source Breakdown Voltage 193 V

Rds On - Drain-Source Resistance -

Operating Frequency 1.8 MHz to 512 MHz

Gain 24.8 dB

Output Power 35 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style Screw Mounts

Package / Case NI-360H-2SB

Packaging Cut Tape

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series MRFX035H

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 1 Channel

Pd - Power Dissipation 154 W

Product Type RF MOSFET Transistors

Standard Pack Qty 50

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 1.7 V

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Please send inquiry, we will respond immediately.

Mfr. Part #: MRFX035HR5