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MRFX600GSR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V

Product Category: Transistors RF
Mfr. Part #
MRFX600GSR5
Manufacturer: NXP
Package: Reel
Lead Free Status /RoHS Status:
Data Sheet: MRFX600GSR5 Datasheet
Inventory: In Stock

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Mfr. Part #: MRFX600GSR5

Specifications

Specifications

Manufacturer NXP

Transistor Polarity N-Channel

Technology Si

Id - Continuous Drain Current 32 A

Vds - Drain-Source Breakdown Voltage 193 V

Operating Frequency 1.8 MHz to 400 MHz

Gain 26.4 dB

Output Power 600 W

Minimum Operating Temperature - 40 C

Maximum Operating Temperature + 150 C

Mounting Style SMD/SMT

Package / Case NI-780GS-4L

Packaging Reel

RF & Wireless RF MOSFET Transistors

Series MRFX600H

Transistor Type LDMOS FET

Type RF Power MOSFET

Brand NXP Semiconductors

Number of Channels 2 Channel

Pd - Power Dissipation 1.333 kW

Product Type RF MOSFET Transistors

Standard Pack Qty 50

Subcategory MOSFETs

Vgs - Gate-Source Voltage - 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage 2.1 V

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Please send inquiry, we will respond immediately.

Mfr. Part #: MRFX600GSR5