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M120DUM31CTBL1NG

Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1

Product Category: Discrete Semiconductor Modules
Mfr. Part #
MSCSM120DUM31CTBL1NG
Manufacturer: Microchip
Lead Free Status /RoHS Status:
Data Sheet: MSCSM120DUM31CTBL1NG Datasheet
Inventory: In Stock

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Mfr. Part #: MSCSM120DUM31CTBL1NG

Specifications

Specifications

Manufacturer Microchip

Product Power MOSFET Modules

Type Dual Common Source SiC MOSFET Power Module

Technology SiC

Vf - Forward Voltage 1.5 V at 30 A

Vr - Reverse Voltage 1.2 kV

Vgs - Gate-Source Voltage - 10 V, 25 V

Mounting Style Screw Mounts

Minimum Operating Temperature - 55 C

Maximum Operating Temperature + 175 C

Configuration Dual Common Source

Brand Microchip Technology

Transistor Polarity N-Channel

Fall Time 25 ns

Id - Continuous Drain Current 79 A

Pd - Power Dissipation 310 W

Product Type Discrete Semiconductor Modules

Rds On - Drain-Source Resistance 31 mOhms

Rise Time 30 ns

Standard Pack Qty 1

Subcategory Discrete Semiconductor Modules

Typical Turn-Off Delay Time 50 ns

Typical Turn-On Delay Time 30 ns

Vds - Drain-Source Breakdown Voltage 1.2 kV

Vgs th - Gate-Source Threshold Voltage 1.8 V

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Mfr. Part #: MSCSM120DUM31CTBL1NG