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MT16VDDT6464AY-40BG6
MODULE DDR SDRAM 512MB 184UDIMM
- Product Category: Memory Modules
- Mfr. Part # MT16VDDT6464AY-40BG6
- Manufacturer: Micron Technology Inc.
- Package: 184-UDIMM
- Lead Free Status /RoHS Status:
- Data Sheet: MT16VDDT6464AY-40BG6 Datasheet
- Inventory: In Stock
- Unit Price: Inquiry
- Quantity: -+
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Mfr. Part #: MT16VDDT6464AY-40BG6
- Specifications
- Product Details
Specifications
Product Details
General Description
The MT16VDDF6464H and MT16VDDF12864H are high-speed, CMOS, dynamic random access 512MB and 1GB memory modules organized in a x64 configuration. These modules use DDR SDRAM devices with four internal banks.Features
• 200-pin, small-outline dual in-line memory module (SODIMM)• Fast data transfer rates: PC2100, PC2700, and PC3200
• 512MB (64 Meg x 64) and 1GB (128 Meg x 64)
• VDD = VDDQ = +2.5V (-40B: VDD = VDDQ = +2.6V)
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR) 2n-prefetch architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/received with data—that is, source-synchronous data capture
• Differential clock inputs CK and CK#
• Multiple internal device banks for concurrent operation
• Dual rank
• Programmable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs maximum average periodic refresh interval
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum compatibility
• Gold edge contacts
ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MT16VDDT6464AY-40BG6. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.
Please send inquiry, we will respond immediately.
Mfr. Part #: MT16VDDT6464AY-40BG6