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MT3S113TE85LF

RF Bipolar Transistors RF Bipolar Transistor .1A 800mW

  • Transistors RF
  • MT3S113(TE85L,F)
  • Toshiba
  • Cut Tape/Reel
  • MT3S113(TE85L,F) Datasheet
  • In Stock
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Mfr. Part #: MT3S113(TE85L,F)

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  • Specifications

Specifications

Manufacturer Toshiba
RoHS
Series MT3S113
Transistor Type Bipolar
Technology SiGe
Transistor Polarity NPN
Operating Frequency 12.5 GHz
DC Collector/Base Gain hfe Min 200
Collector- Emitter Voltage VCEO Max 5.3 V
Emitter- Base Voltage VEBO 600 mV
Continuous Collector Current 100 mA
Maximum Operating Temperature + 150 C
Configuration Single
Mounting Style SMD/SMT
Package / Case TO-236-3
Packaging Cut Tape
Packaging Reel
RF & Wireless RF Bipolar Transistors
Brand Toshiba
Maximum DC Collector Current 100 mA
Pd - Power Dissipation 800 mW
Product Type RF Bipolar Transistors
Standard Pack Qty 3000
Subcategory Transistors

ICCHIPS, where the pulse of innovation meets the heartbeat of wholesale excellence. Unveil the future of electronic components with our flagship product, the MT3S113TE85LF. As your conduit to groundbreaking technology, we stand as the bridge between visionary suppliers and pioneering manufacturers, committed to orchestrating seamless transactions that cater to the ever-evolving needs of the electronics industry.

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Mfr. Part #: MT3S113(TE85L,F)

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